Different dielectric breakdown mechanisms for RF-MgO and naturally oxidized MgO

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概要

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• We investigate the voltage breakdown of the spin transfer torque magnetic random access memory (STT-MRAM) with perpendicular magnetic tunnel junctions (pMTJs). Different breakdown behaviors are observed for RF-MgO pMTJs and naturally oxidized MgO pMTJs. While the time-to-failure body distribution of the naturally oxidized MgO follows the Weibull distribution, that of RF-MgO follows the lognormal distribution. This result suggests distinctly different dielectric breakdown mechanisms for naturally oxidized MgO and RF-MgO. For low failure probability, the progressive voltage breakdown of RF-MgO (associated with the lognormal distribution) results in an order-of-magnitude reliability improvement over the abrupt breakdown of the naturally oxidized MgO. We show that RF-MgO is suitable for perpendicular STT-MRAM applications.

• 2014-07-31

著者

• Wang Xiaobin

  Avalanche Technology, 46600 Landing Parkway, Fremont, CA 94538, U.S.A.

関連論文

• Different dielectric breakdown mechanisms for RF-MgO and naturally oxidized MgO

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