Development of InGaN-based red LED grown on (0001) polar surface

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-06-23

著者

• Hwang Jong-Il

  Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan

• Hwang Jong-Il

  Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan.

関連論文

• Wavelength Dependence of Internal Electric Field on Local Structure of Green-Yellow InGaN/GaN Quantum Wells (Special Issue : Recent Advances in Nitride Semiconductors)
• Development of InGaN-based red LED grown on (0001) polar surface

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