BaSi

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概要

• 論文の詳細を見る

• Employing a hybrid density functional theory, we reveal the origin of the large absorption coefficient in BaSi<inf>2</inf>, which is roughly two to eighty times larger at ħω − E<inf>g</inf>= 0.5 eV than other conventional absorbers such as Si, GaAs, CdTe, CuInSe<inf>2</inf>, and Cu<inf>2</inf>ZnSnS<inf>4</inf>. This is explained on the basis of the electronic band structure of BaSi<inf>2</inf>, whereby the lowest conduction band (CB) has a small dispersion, owing to the localized Ba-d states, resulting in flat bands. Consequently, these flat bands contribute to a wide range of optical absorption in the low-energy region and lead to high optical activity in BaSi<inf>2</inf>.

• Institute of Physicsの論文
• 2014-07-04

著者

• Kumar Mukesh

  Environmental Remediation Materials Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan.

関連論文

• BaSi

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