N
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概要
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Hydrogenated amorphous carbon nitride (a-CN<inf>x</inf>:H) films were formed on p-Si wafers set on the lower electrode by pulsed supermagnetron plasma chemical vapor deposition using N<inf>2</inf>or H<inf>2</inf>/isobutane (i-C<inf>4</inf>H<inf>10</inf>) mixed gases. The lower-electrode rf power of 800 W (13.56 MHz) was modulated by a 2.5-kHz pulse at a duty ratio of 12.5%, and the upper-electrode rf power of 100 W was supplied continuously. The N<inf>2</inf>or H<inf>2</inf>gas concentration was controlled at levels of 0--80%. The optical band gap decreased with a decrease of H<inf>2</inf>concentration and an increase of N<inf>2</inf>concentration. For the use of these a-CN<inf>x</inf>:H films as membrane electrodes for the selective transport of photoelectrons, a-CN<inf>x</inf>:H/p-Si photovoltaic cells (PVCs) (a-CN<inf>x</inf>:H film thickness: 25 nm) were formed as prototypes. In an experiment on these PVCs, the energy conversion efficiency increased from 0.0005 (high H<inf>2</inf>) to 0.5% (high N<inf>2</inf>) with the decrease of H<inf>2</inf>concentration and increase of N<inf>2</inf>concentration.
- 2013-11-25
著者
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Kinoshita Haruhisa
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Ninomiya Yosuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
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Kato Takeyuki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan