Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing
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概要
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We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X<sup>+</sup>emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k\cdot p calculations, which suggest the increase in height on annealing is responsible for this enhancement.
- 2013-12-25
著者
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Arakawa Yasuhiko
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Harbord Edmund
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Ota Yasutomo
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Igarashi Yuichi
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Shirane Masayuki
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Kumagai Naoto
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Ohkouchi Shunsuke
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Iwamoto Satoshi
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Yorozu Shinichi
The Institute for Quantum Nano Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
関連論文
- Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing
- Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing