Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

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概要

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• The linear electro-optic effect in InGaN/AlGaN/GaN pn-heterostructures for light emitting diodes, grown by metal--organic chemical vapor deposition on sapphire substrates and flip-chip mounted, was studied by electroreflectance spectroscopy. Interference fringes, whose parameters depend on the DC voltage applied on the pn-junction, were observed in electroreflectance spectra. Data analysis, based on a calculation of the built-in electric field in the depletion layer and linear electro-optic effect, yielded the linear electro-optic coefficient r_{13} of 22\pm 6 pm/V for hexagonal In<inf>0.12</inf>Ga<inf>0.88</inf>N.

• 2013-08-25

著者

• Bokov Pavel

  Physics Department, M.V. Lomonosov Moscow State University, Leninskie Gory, 119991, Russia

• Avakyants Lev

  Physics Department, M.V. Lomonosov Moscow State University, Leninskie Gory, 119991, Russia

• Aslanyan Artem

  Physics Department, M.V. Lomonosov Moscow State University, Leninskie Gory, 119991, Russia

• Chervyakov Anatoly

  Physics Department, M.V. Lomonosov Moscow State University, Leninskie Gory, 119991, Russia

• Polozhentsev Kirill

  Physics Department, M.V. Lomonosov Moscow State University, Leninskie Gory, 119991, Russia

関連論文

• Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures
• Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures (Special Issue : Recent Advances in Nitride Semiconductors)

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