Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al

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A C-doped p-AlGaInN light-emitting diode (LED) fabricated from III--V nitride was grown by metalorganic vapor phase epitaxy (MOVPE) by the insertion of Al<inf>4</inf>C<inf>3</inf>/Al<inf>2</inf>O<inf>3</inf>(0001). Al<inf>4</inf>C<inf>3</inf>/Al<inf>2</inf>O<inf>3</inf>(0001) with a size of 1\times 1 mm2was placed at the center of a 2-in. Al<inf>2</inf>O<inf>3</inf>(0001) substrate before growing the LED. An InGaN/GaN multi quantum well (MQW) was used as an active layer. The concentrations of C and Si were different with the distance of Al<inf>4</inf>C<inf>3</inf>. Maximum C (p\geqq \add{-1.2}10^{18} cm-3) and Si (n\geqq \add{-1.2}10^{19} cm-3) intensities were observed at the edge and the half of center and edge on the grown wafer, respectively. The voltage of the C-doped AlGaInN LED was 6.9 V at 10 mA. The peak electroluminescence (EL) wavelength and the full-width at half-maximum (FWHM) were 395 nm and about 30 nm, respectively. It was clearly proven that u-Al<inf>0.19</inf>Ga<inf>0.81</inf>N became p-Al<inf>0.19</inf>Ga<inf>0.81</inf>N.
2013-08-25