ZnO Thick Film Growth on n-GaN by Photoassisted Electrodeposition

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概要

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• Zinc oxide (ZnO) thick film growth on n-GaN using an electrodeposition technique was investigated. Although the reaction temperature is about 70 °C in cathodic electrodeposition, ZnO can grow epitaxially on GaN owing to their small lattice mismatch. However, the quality of grown ZnO is too high for electrons to be supplied from the substrate. As a consequence, the electrodeposition can continue for only 50 min. On the other hand, in the case of the growth of ZnO on highly oriented pyrolytic graphite (HOPG), the electrochemical reaction can continue for over 15 h owing to the supply of electrons via grain boundaries or defects. For a long continuous electrochemical reaction, we supply electrons to the surface by light excitation using a Xe lamp. A stable electrochemical reaction is realized and a 5-μm-thick ZnO film with high uniformity is obtained.

• 2013-08-25

著者

• Tanaka Ichiro

  Faculty Of Engineering Osaka

• Tanaka Ichiro

  Faculty of Systems Engineering, Wakayama University, Wakayama 640-8510, Japan

• Uno Kazuyuki

  Faculty of Systems Engineering, Wakayama University, Wakayama 640-8510, Japan

• Tauchi Yasuhiro

  Faculty of Systems Engineering, Wakayama University, Wakayama 640-8510, Japan

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• ZnO Thick Film Growth on n-GaN by Photoassisted Electrodeposition
• ZnO Thick Film Growth on n-GaN by Photoassisted Electrodeposition (Special Issue : Recent Advances in Nitride Semiconductors)

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