A Comparative Study of Hydrogen Implantation Induced Blistering and Exfoliation in GaN and AlN

概要

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GaN and AlN epitaxial layers were implanted with 100 keV H<sup>+</sup>ions at implantation temperatures of RT and 300 °C. The GaN and AlN were H-implanted with fluence of 2.5 \times 10^{17} and 1 \times 10^{17} cm<sup>-2</sup>, respectively, in order to observe the surface blistering. The morphological investigations revealed that post-implantation annealing resulted in the formation of small size surface blisters with lower exfoliation depth in GaN compared to AlN for the implantation at RT. However, for the implantation at 300 °C, blistering occurred in the as-implanted GaN, whereas large area exfoliation was observed in AlN after annealing. Transmission electron microscopy (TEM) images showed formation of narrower damage band in AlN (as compared to GaN) filled with H-induced nanovoids. This comparative study has shown that H-induced damage and depth distribution of the implanted hydrogen was responsible for the nature of surface buckling in H-implanted GaN and AlN.
2013-08-25