Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

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概要

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• We report on accumulation of background Si and O impurities measured by secondary ion mass spectrometry (SIMS) at the sub-interfaces in undoped, Zn- and Mg-doped multi-layer GaN structures grown by hydride vapor phase epitaxy (HVPE) on sapphire substrates with growth interruptions. The impurities accumulation is attributed to reaction of ammonia with the rector quartz ware during the growth interruptions. Because of this effect, HVPE-grown GaN layers had excessive Si and O concentration on the surface that may hamper forming of ohmic contacts especially in the case of p-type layers and may complicate homo-epitaxial growth of a device structure.

• 2013-08-25

著者

• Volkova Anna

  Ostendo Technology GaN Lab, 12210 Plum Orchard Dr, Suit 214 Silver Spring, MD 20904, U.S.A.

• Usikov Alexander

  De Core Nanosemiconductors Ltd., GIDC Electronic Park (SEZ), Sector 25 Kolavada Road, Gandhinagar 382028, India

• Soukhoveev Vitali

  Ostendo Technology GaN Lab, 12210 Plum Orchard Dr, Suit 214 Silver Spring, MD 20904, U.S.A.

• Kovalenkov Oleg

  Ostendo Technology GaN Lab, 12210 Plum Orchard Dr, Suit 214 Silver Spring, MD 20904, U.S.A.

• Syrkin Alexander

  Ostendo Technology GaN Lab, 12210 Plum Orchard Dr, Suit 214 Silver Spring, MD 20904, U.S.A.

• Shapovalov Liza

  Ostendo Technology GaN Lab, 12210 Plum Orchard Dr, Suit 214 Silver Spring, MD 20904, U.S.A.

• Ivantsov Vladimir

  Ostendo Technology GaN Lab, 12210 Plum Orchard Dr, Suit 214 Silver Spring, MD 20904, U.S.A.

関連論文

• Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

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