Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

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概要

• 論文の詳細を見る

• AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN.

• 2013-08-25

著者

• Tsukihara Masashi

  Ushio Inc., Himeji, Hyogo 671-0224, Japan

• Nishino Katsushi

  The University of Tokushima, Tokushima 770-8506, Japan

• Nakauchi Jun

  The University of Tokushima, Tokushima 770-8506, Japan

• Hayashi Kotaro

  The University of Tokushima, Tokushima 770-8506, Japan

関連論文

• Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

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