High Quality, Low Cost Ammonothermal Bulk GaN Substrates

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概要

• 論文の詳細を見る

• Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5--3 mm. The highest growth rates are greater than 40 μm/h and rates in the 10--30 μm/h range are routinely observed for all orientations. These values are 5{\mbox{--}}100\times larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance--voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20--100 arcsec and dislocation densities of 1 \times 10^{5}--5 \times 10^{6} cm^-2. Dislocation densities below 10^{4} cm^-2are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers.

• 2013-08-25

著者

• Ehrentraut Dirk

  Soraa, Inc., Goleta, CA 93117, U.S.A.

• Pakalapati Rajeev

  Soraa, Inc., Goleta, CA 93117, U.S.A.

• Kamber Derrick

  Soraa, Inc., Goleta, CA 93117, U.S.A.

• Jiang Wenkan

  Soraa, Inc., Goleta, CA 93117, U.S.A.

• Pocius Douglas

  Soraa, Inc., Goleta, CA 93117, U.S.A.

• Downey Bradley

  Soraa, Inc., Goleta, CA 93117, U.S.A.

• McLaurin Melvin

  Soraa, Inc., Goleta, CA 93117, U.S.A.

関連論文

• High Quality, Low Cost Ammonothermal Bulk GaN Substrates
• High Quality, Low Cost Ammonothermal Bulk GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)

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