Study of Spurious Response near the Fast Shear Wave in SiO
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概要
- 論文の詳細を見る
The shear horizontal (SH) mode on the SiO<inf>2</inf>/Al/LiNbO<inf>3</inf>structure is studied because of its sufficient electromechanical coupling factor (K^{2}) and good temperature coefficient of frequency (TCF). The authors proposed a method of suppressing the spurious response of the Rayleigh mode and the transverse mode for narrow duplex gap applications. For the narrow duplex gap application, the SiO<inf>2</inf>thickness must be increased to achieve good TCF characteristics. However, another spurious response appears near the fast shear wave with increasing SiO<inf>2</inf>thickness. In this paper, we discuss the suppression mechanism of the spurious response near the fast shear wave.
- 2013-07-25
著者
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Hamaoka Yosuke
Industrial Devices Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
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Tsurunari Tetsuya
Industrial Devices Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
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Goto Rei
Industrial Devices Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
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Fujiwara Joji
Industrial Devices Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
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Nakamura Hiroyuki
Industrial Devices Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
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Nakanishi Hidekazu
Industrial Devices Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
関連論文
- Study of Spurious Response near the Fast Shear Wave in SiO
- Reduction of Transverse Surface Acoustic Wave Leakage in Resonator on Al/42° YX-LiTaO