Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory
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概要
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The effects of interfacial fluorination on the metal/Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf>/SiO<inf>2</inf>/Si (MAHOS) memory structure have been investigated. By comparing MAHOS memories with and without interfacial fluorination, it was identified that the deterioration of the performance and reliability of MAHOS memories is mainly due to the formation of an interfacial layer that generates excess oxygen vacancies at the interface. Interfacial fluorination suppresses the growth of the interfacial layer, which is confirmed by X-ray photoelectron spectroscopy depth profile analysis, increases enhanced program/erase efficiency, and improves data retention characteristics. Moreover, it was observed that fluorination at the SiO--HfO interface achieves a more effective performance enhancement than that at the HfO--AlO interface.
- 2013-07-25
著者
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Cui Yanxiang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics of Chinese Academy of Science, Beijing 100190, China
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Wang Chenjie
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
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Huo Zongliang
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
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Liu Ziyu
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
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Liu Yu
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
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Wang Yumei
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics of Chinese Academy of Science, Beijing 100190, China
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Li Fanghua
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics of Chinese Academy of Science, Beijing 100190, China
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Liu Ming
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
関連論文
- Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory
- Effects of Interfacial Fluorination on Performance Enhancement of High-k-Based Charge Trap Flash Memory