p-Type Sb

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概要

• 論文の詳細を見る

• We developed a thermally assisted sputtering method (TASM) based on direct current magnetron sputtering to increase the rates of deposition of Sb<inf>2</inf>Te<inf>3</inf>and Bi<inf>2</inf>Te<inf>3</inf>films. The sputtering target was heated with the thermal energy of Ar plasma without any additional heating systems. The stoichiometric Sb<inf>2</inf>Te<inf>3</inf>(p-type) and Bi<inf>2</inf>Te<inf>3</inf>(n-type) films were obtained by TASM. The maximum deposition rate of the films was approximately 1.6 μm/min, which is large for a sputtering method. The differences in the composition ratio between the sputtering target and the deposited films were as small as 3.6 (p-type) and 1.5% (n-type). TASM was applied to the fabrication of a flexible thermoelectric film module. The generation properties of the film module coincided with the values that were estimated on the basis of the thermoelectric properties of films deposited on a SiO<inf>2</inf>glass substrate. These results indicate that TASM is useful for fabricating thermoelectric film modules.

• 2013-06-25

著者

• OZAKI Kimihiro

  National Institute of Advanced Industrial Science and Technology

• Mikami Masashi

  National Inst. Of Advanced Industrial Sci. And Technol.

• Mizoshiri Mizue

  National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan

• Mikami Masashi

  National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan

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• p-Type Sb

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