Visible Electroluminescence of a n

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概要

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• A n⁺-indium--tin-oxide (ITO)/Sm-doped i-TiO<inf>2</inf>/p-NiO/p⁺-Si light-emitting diode (LED) was fabricated via laser ablation and post annealing treatment. The LED emitted red light at room temperature under a relatively low threshold voltage of 12 V. The electroluminescence and photoluminescence spectra of the LED were compared, and a stable and single-type Sm³⁺luminescent center was observed to give rise to red emission under different excitation conditions. These results suggest that there is a strong possibility of realizing LEDs based on rare-earth-doped metal oxide semiconductors.

• 2013-06-25

著者

• Harako Susumu

  Advanced Device Laboratories and Department of Physics, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan

• Ohtsuki Takuya

  Advanced Device Laboratories and Department of Physics, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan

• Komuro Syuji

  Faculty of Science and Technology, Toyo University, Kawagoe, Saitama 350-8585, Japan

• Zhao Xinwei

  Advanced Device Laboratories and Department of Physics, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan

関連論文

• Photoluminescence and X-ray Absorption Fine Structure Analysis of Sm-Doped TiO Thin Films (Special Issue : Microprocesses and Nanotechnology)
• Visible Electroluminescence of a n

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