Temperature-Controlled Symmetry of Linear Polarization of Photoluminescence from InGaAs-Buried InAs/GaAs Quantum Dots

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概要

• 論文の詳細を見る

• We have succeeded in adjusting the symmetry of the linear polarization of exciton emission from self-assembled InAs/GaAs quantum dots by controlling the combination of temperature and composition of the InGaAs burying layer. The anisotropic shape of the Stranski--Krastanow-type quantum dot is a drawback to the generation of a polarization-entangled photon pair. We found that the polarization symmetry of the intensity and wavelength of photon emission depends on the sample temperature and the composition of the burying layer. The ground-state emission peaks in two linear polarization directions were tuned to overlap by lowering the temperature and using a high indium composition of the burying layer. Our results will aid in the development of an entangled-photon generator using the emission of exciton molecule in self-assembled quantum dots.

• 2013-06-25

著者

• Mukai Kohki

  Yokohama National Univ. Kanagawa Jpn

• Nakashima Seisuke

  Yokohama National University, Yokohama 240-8501, Japan

• Kikushima Kousuke

  Yokohama National University, Yokohama 240-8501, Japan

• Tanaka Tomoya

  Yokohama National University, Yokohama 240-8501, Japan

• Mukai Kohki

  Yokohama National University, Yokohama 240-8501, Japan

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• Temperature-Controlled Symmetry of Linear Polarization of Photoluminescence from InGaAs-Buried InAs/GaAs Quantum Dots

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