Characterization of Metal--Insulator--Semiconductor Capacitor with Poly(methyl methacrylate):Titanium Dioxide as Insulator

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The electrical characteristics of metal--insulator--semiconductor (MIS) capacitor employing nanocomposite poly(methyl methacrylate):titanium dioxide (PMMA:TiO<inf>2</inf>) as insulator and zinc oxide (ZnO) as the semiconductor were discussed. The capacitance of the MIS devices was found to be 0.42 and 0.29 nF at frequency of 1 kHz and 1 MHz respectively. Meanwhile, the dielectric loss values are constant ({\sim}60\times 10^{-3}) in the frequency range from 100 Hz to 100 kHz. Current--voltage (I--V) results for MIS are much higher than MIM is due to there is a trapped holes/electron located at the semiconductor--insulator interface which contributes to high leakage current in the MIS device. We conclude, although interposing the PMMA:TiO<inf>2</inf>nanocomposite insulator layer between the semiconductor and Al electrodes degrades the MIS device performance, nevertheless, they remain sufficiently good for use in organic electronic devices.
2013-06-25