Carrier Dynamics of a Type-II Vertically Aligned InAs Quantum Dot Structure with a GaAsSb Strain-Reducing Layer

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概要

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• The carrier dynamics of vertically aligned InAs/GaAsSb type-II quantum dot (QD) structure are comprehensively analyzed by time-resolved photoluminescence (TRPL) in this study. A columnar InAs QD structure with an overgrown layer of GaAsSb is proposed to enhance the thermal stability and carrier lifetime through the type-II energy band alignment and carrier tunneling effect. The carrier lifetimes of columnar QD structures were in accordance with the PL spectra in wavelength-dependent TRPL measurements because of the electronic coupling effect and the dot-size-dependent oscillator strength. The improved results in this work make columnar type-II QDs promising candidates for novel optoelectronic device application.

• 2013-08-25

著者

• Wang Yen-Ting

  Department of Photonics Engineering, Yuan Ze University, Chungli 32003, Taiwan

• Fang Chi

  Department of Photonics Engineering, Yuan Ze University, Chungli 32003, Taiwan

• Liu Wei-Sheng

  Department of Photonics Engineering, Yuan Ze University, Chungli 32003, Taiwan

• Qiu Wen-Yu

  Department of Photonics Engineering, Yuan Ze University, Chungli 32003, Taiwan

• WANG Yen-Ting

  Department of Photonics Engineering, Yuan Ze University

関連論文

• Carrier Dynamics of a Type-II Vertically Aligned InAs Quantum Dot Structure with a GaAsSb Strain-Reducing Layer

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