Performance Improvements of Metal--Oxide--Nitride--Oxide--Silicon Nonvolatile Memory with ZrO

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概要

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• The properties of ZrO<inf>2</inf>and ZrON as the charge-trapping layer (CTL) of metal--oxide--nitride--oxide--silicon memory are investigated. The microstructure and chemical bonding are examined by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that nitrogen incorporation in ZrO<inf>2</inf>can induce more charge-trapping sites, effectively suppress the formation of zirconium silicate (leading to better interface quality between the CTL and the SiO<inf>2</inf>tunneling layer), and increase the dielectric constant of ZrO<inf>2</inf>, thus improving the memory performances (large memory window, high program/erase speed, good endurance characteristics, and small charge loss).

• 2013-08-25

著者

• Chen Jian-Xiong

  School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, P. R. China

• Xu Jing-Ping

  School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, P. R. China

• Liu Lu

  School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, P. R. China

• Lai Pui-To

  Department of Electrical & Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong

関連論文

• Performance Improvements of Metal--Oxide--Nitride--Oxide--Silicon Nonvolatile Memory with ZrO

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