High Performance of the Thermal Transport in Graphene Supported on Hexagonal Boron Nitride

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概要

• 論文の詳細を見る

• Hexagonal boron nitride (hBN) is a promising substrate for graphene devices. We investigated the thermal transport of graphene supported on hBN from first principles. The thermal conductance of graphene with substrate coupling greatly decreases at low temperatures but can be preserved as high as 96% that of isolated graphene at room temperature. The substrate coupling mechanism is discussed. The effects of different stacking orders and number of layers on the thermal conductance are also determined. The interesting findings obtained in this study facilitate the development of high-performance graphene devices for electronics and heat dissipation.

• 2013-07-25

著者

• Lu Shushen

  School Of Chemistry And Chemical Engineering Sun Yat-sen University

• Wang Xiaoming

  School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275, China

• Huang Tianlan

  School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou 510275, China

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