Sinusoidally Gated InGaAs Avalanche Photodiode with Direct Hold-Off Function for Efficient and Low-Noise Single-Photon Detection

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概要

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• We present a module for directly applying a hold-off time to a 1 GHz sinusoidally gated InGaAs avalanche photodiode (APD). With this module, a detection efficiency of 21.3% at 1550 nm was achieved with an afterpulse probability of 3.7% and a dark count probability per gate of 2.1\times 10^{-6}. Furthermore, the simple but robust hold-off module was suitable not only for the periodical gating APDs but also for free-running APDs.

• 2013-06-25

著者

• Inoue Shuichiro

  Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda, Tokyo 101-8308, Japan

• Namekata Naoto

  Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308, Japan

• Wu Qing-Lin

  Institute of Quantum Science, Nihon University, Chiyoda, Tokyo 101-8308, Japan

• Namekata Naoto

  Institute of Quantum Science, Nihon University, Chiyoda, Tokyo 101-8308, Japan

関連論文

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• Sinusoidally Gated InGaAs Avalanche Photodiode with Direct Hold-Off Function for Efficient and Low-Noise Single-Photon Detection
• Single-Photon Source for Telecommunication Wavelengths Using Nondegenerate Photon Pairs from a Periodically Poled LiNbO3 Waveguide
• Sinusoidally Gated InGaAs Avalanche Photodiode with Direct Hold-Off Function for Efficient and Low-Noise Single-Photon Detection

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