Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices
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概要
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The superlattice film with the periodical thin film layers of Sb<inf>2</inf>Te<inf>3</inf>/GeTe used as a phase change memory was studied for deposition in the crystal phase. We successfully fabricated the superlattice structure with the sputtering temperature of 200 °C. Moreover, the pillar structure with the size of 70 nm was dry-etched using a HBr/Ar gas mixture.
- 2013-05-25
著者
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Tominaga Junji
National Institute of Advanced Industrial Science and Technology, (AIST), Center for Applied Near-Field Optics Research (CAN-FOR), Tsukuba, Ibaraki 305-8562, Japan
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Kitamura Masahito
Low-Power Electronics Association and Projects (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Ohyanagi Takasumi
Low-Power Electronics Association and Projects (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Takaura Norikatsu
Low-Power Electronics Association and Projects (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Tai Mitsuharu
Low-Power Electronics Association and Projects (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Kinoshita Masaharu
Low-Power Electronics Association and Projects (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Akita Kenichi
Low-Power Electronics Association and Projects (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Morikawa Takahiro
Low-Power Electronics Association and Projects (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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- Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices