Parasitic Bipolar Effect of a Thin-Film Silicon-on-Insulator Power Metal--Oxide--Semiconductor Field-Effect Transistor at High Temperatures

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概要

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• In this paper, we describe the parasitic bipolar effect of the fabricated thin-film silicon-on-insulator (SOI) power metal--oxide--semiconductor field-effect transistor (MOSFET) at high temperatures. This effect in the on-state was suppressed as temperature increased. This effect in the off-state was promoted as temperature and body contact pitch increased. The parasitic bipolar effect caused by the thermally generated current is enhanced by increasing temperature and decreasing channel length. This reduced breakdown voltage.

• 2013-04-25

著者

• MATSUMOTO Satoshi

  Kyushu Institute of Technology

• Morisawa Yuka

  Kyushu Institute of Technology, Kitakyushu 804-8550, Japan

• Uchida Atsushi

  Kyushu Institute of Technology, Kitakyushu 804-8550, Japan

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