Performance Fluctuations in 10-nm Trigate Metal--Oxide--Semiconductor Field-Effect Transistors: Impact of the Channel Geometry

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概要

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• Off-current and threshold voltage fluctuations in trigate (TG), and single-gate (SG) silicon-on-insulator (SOI) MOSFETs with a gate length of 10 nm are studied by means of three-dimensional (3D) device simulations. Special emphasis is paid to the role of the channel design. We demonstrate that both geometry fluctuations and the presence of single charged impurities in the active device regions can easily alter the off-currents of SG and TG MOSFET designs that nominally meet the I_{\text{on}}/I\raise.3_{\scale70%\tbox{off}} requirements by more than one order of magnitude. It will be shown that regarding the robustness against geometry fluctuations, neither the SG MOSFET nor one of the possible TG MOSFET designs can be preferred in general. The SG concept, however, turns out to be exceptionally robust against threshold voltage fluctuations caused by single charged impurities.

• 2013-04-25

著者

• Schwierz Frank

  Technische Universität Ilmenau, Fachgebiet Festkörperelektronik, PF 100565, 98684 Ilmenau, Germany

• Granzner Ralf

  Technische Universität Ilmenau, Fachgebiet Festkörperelektronik, PF 100565, 98684 Ilmenau, Germany

• Engert Sonja

  Technische Universität Ilmenau, Fachgebiet Theoretische Elektrotechnik, PF 100565, 98684 Ilmenau, Germany

• Töpfer Hannes

  Technische Universität Ilmenau, Fachgebiet Theoretische Elektrotechnik, PF 100565, 98684 Ilmenau, Germany

関連論文

• Performance Fluctuations in 10-nm Trigate Metal--Oxide--Semiconductor Field-Effect Transistors: Impact of the Channel Geometry

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