Reactive Ion Etching Texturing for Multicrystalline Silicon Solar Cells Using a SF
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概要
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Maskless random reactive ion etching (RIE) texturing employing a SF<inf>6</inf>/O<inf>2</inf>/Cl<inf>2</inf>gas mixture was investigated in order to achieve higher efficiencies in multicrystalline silicon (mc-Si) solar cells. Triangular pyramid structures with an aspect ratio of 1 were formed and, when the RIE power increased, the average reflectance was reduced by about 1.46% per 10 W. This was due to the increased density of the surface features. The performances of all of the RIE-textured mc-Si solar cells were improved compared with that of the reference cell. Among them, the 110 W cell, which had a 0.6% higher efficiency than the reference cell, had the highest efficiency of 16.82%. An impedance analysis was carried out to determine series resistance (R_{\text{s}}), shunt resistance (R_{\text{sh}}), and junction capacitance (C_{\text{j}}). Interestingly, the cell with higher efficiencies and higher structure densities had higher linear reverse currents.
- 2013-03-25
著者
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Lee Myoung
Daegu Technopark Nano Convergence Practical Application Center, Daegu 704-801, Korea
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Park Kwang
Graduate School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Jeon Kyeong
Daegu Technopark Nano Convergence Practical Application Center, Daegu 704-801, Korea
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Choi Sie
Graduate School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea