Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties

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概要

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• AlGaInAs nanowires or rods of 20--40 nm diameter were formed by depositing an AlGaAs/GaAs/InAs short-period superlattice onto self-organized InAs quantum dots on GaAs. The In content is found to be substantially higher in the rods than in the superlattice matrix, implying that rods serve as favorable paths for electrons. Transport properties measured at 4.2 K on a sample where 79-nm-long rods are buried between n⁺-GaAs electrodes show that rods are indeed far more conductive than their matrix barrier. Photoluminescence study has indicated that photogenerated carriers recombine mostly in the seed dot portion of rods.

• 2013-04-25

著者

• Sakaki Hiroyuki

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan

• Sakaki Hiroyuki

  Toyota Technological Institute, Nagoya 468-0034, Japan

• Ohmori Masato

  Toyota Technological Institute, Nagoya 468-0034, Japan

• Vitushinskiy Pavel

  Toyota Technological Institute, Nagoya 468-0034, Japan

• Kojima Tomoya

  Toyota Technological Institute, Nagoya 468-0034, Japan

関連論文

• Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties
• Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties

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