High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice

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概要

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• Optimized transmission-type photocathodes with a GaAs/GaAsP strain-compensated superlattice were developed. The strain-compensated superlattice structures were of high crystal quality, and electron beams from the photocathodes had a maximum spin polarization of 92% and a quantum efficiency of 0.4% without an antireflection coating. The strain-compensated superlattice structure effectively prevented strain relaxation, and the high spin polarization was maintained up to a superlattice layer thickness of 300 nm. Increasing the superlattice layer thickness effectively improved the quantum efficiency while keeping the super high-brightness.

• 2013-01-25

著者

• Takeda Yoshikazu

  Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto, Aichi 489-0965, Japan

• Mano Atsushi

  Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8602, Japan

• Jin Xiuguang

  Institute for Advanced Research, Nagoya University, Nagoya 464-8603, Japan

• Ichihashi Fumiaki

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Yamamoto Naoto

  Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8602, Japan

• YAMAMOTO Naoto

  Synchrotron Radiation Research Center, Nagoya University

• MANO Atsushi

  Synchrotron Radiation Research Center, Nagoya University

関連論文

• Fourfold Increase in Quantum Efficiency in Highly Spin-Polarized Transmission-Type Photocathode
• High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice
• In situ X-ray Reflectivity Measurements on Annealed In
• High-Performance Spin-Polarized Photocathodes Using a GaAs/GaAsP Strain-Compensated Superlattice

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