Temperature Behavior of Uniaxial Anisotropy along [100] Direction in GaMnAs Films
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概要
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We have investigated a uniaxial anisotropy along the [100] direction of GaMnAs film grown on (001) GaAs. The hysteresis observed in the angular dependence of the planar Hall resistance shifted toward the [010] and [0\bar{1}0] directions. This phenomenon was analyzed by introducing an additional uniaxial anisotropy field H_{\text{u2}} along the [100] direction. The magnitude of H_{\text{u2}} is much smaller than those of the cubic H_{\text{c}} and uniaxial H_{\text{u1}} anisotropy fields for this material. The temperature behavior of H_{\text{u2}} appears to be very similar to that of H_{\text{u1}}, suggesting the possibility that H_{\text{u1}} and H_{\text{u2}} have a common origin.
- 2013-01-25
著者
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FURDYNA Jacek
Physics Department, University of Notre Dame
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LEE Sanghoon
Physics Department, Korea University
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LIU Xinyu
Physics Department, University of Notre Dame
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YOO Taehee
Physics Department, Korea University
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LEE Hakjoon
Physics Department, Korea University
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LEE Sangyeop
Physics Department, Korea University
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Lee Hakjoon
Physics Department, Korea University, Seoul 136-701, Korea
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Won Jaehyuk
Physics Department, Korea University, Seoul 136-701, Korea
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Shin Jinsik
Physics Department, Korea University, Seoul 136-701, Korea
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Lee Sanghoon
Physics Department, Korea University, Seoul 136-701, Korea
関連論文
- Multi-Valued Planar Hall Resistance Manipulated by Current Induced Magnetic Field in Fe Films Grown on GaAs(001) Substrates
- Temperature Behavior of Uniaxial Anisotropy along [100] Direction in GaMnAs Films
- Multi-Valued Planar Hall Resistance Manipulated by Current Induced Magnetic Field in Fe Films Grown on GaAs(001) Substrates
- Temperature Behavior of Uniaxial Anisotropy along [100] Direction in GaMnAs Films