Anodic Bonding of Transparent Conductive Oxide Coated Silicon Wafer to Glass Substrate for Solar Cell Applications

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概要

• 論文の詳細を見る

• We report on the anodic bonding of Si wafer coated by thin transparent conductive oxide (TCO) with a glass substrate, for the first time. We obtained sufficient bonding strength of as high as 9.5 MPa using a 30-nm-thick indium tin oxide (ITO) layer. We have also found that the ITO sample shows much stronger bonding strength does a sample that with a zinc oxide layer. The bonding mechanism is discussed in terms of the permeation of indium elements into the glass side driven by electric field. Finally we demonstrated a solar cell using this substrate.

• 2013-01-25

著者

• Koida Takashi

  Advanced Industrial Science and Technology, Research Center for Photovoltaic Technologies, Tsukuba, Ibaraki 305-8568, Japan

• Kaneko Tetsuya

  Advanced Industrial Science and Technology, Research Center for Photovoltaic Technologies, Tsukuba, Ibaraki 305-8568, Japan

• KONDO Michio

  Tokyo Institute of Technology, Department of Innovative and Engineered Materials

• KOIDA Takashi

  Advanced Industrial Science and Technoloay, Research Center for Photovoltaic Technologies

• YUDA Yohei

  Tokyo Institute of Technology, Department of Innovative and Engineered Materials

関連論文

• Anodic Bonding of Transparent Conductive Oxide Coated Silicon Wafer to Glass Substrate for Solar Cell Applications
• Anodic Bonding of Transparent Conductive Oxide Coated Silicon Wafer to Glass Substrate for Solar Cell Applications

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