Low Electrical Resistivity of Ni-Doped La-Cobaltite Thin Films Using a Novel Chemical Solution Route for Thermoelectric Applications

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概要

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• 5 mol % Ni substituted La-cobaltite thin films were successfully prepared by using metal salt precursors-based chemical solution route for thermoelectric applications. We systematically investigated the optimized process conditions for the low-cost effective thermoelectric thin film preparation. The La(Co0.95Ni0.05)O3 thin film showed a fully crystalline perovskite structure after 650 °C annealing process without any second phase. The film showed relatively dense and uniform microstructure with very fine and homogeneous grains. For the oxide-based thermoelectric applications, one of the important key parameters is to reduce the electrical resistivity of the films. It was clarified that Ni substitution played a great role for reducing the electrical resistivity of the films. The average resistivity value of the Ni-doped films was around 0.18 \Omega cm at room temperature, which was approximately over two times lower value than that of the undoped La-cobaltite thin films.

• 2011-11-25

著者

• Shim In-Bo

  Department of Nano and Electronic Physics, Kookmin University, Seoul 136-702, Korea

• Kim Seung-Hyun

  School of Engineering, Brown University, Providence, RI 02912, U.S.A.

• Kingon Angus

  School of Engineering, Brown University, Providence, RI 02912, U.S.A.

• Turan Bugra

  RWTH Aachen University, Aachen 52062, Germany

• Jiang Wenyan

  School of Engineering, Brown University, Providence, RI 02912, U.S.A.

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• Low Electrical Resistivity of Ni-Doped La-Cobaltite Thin Films Using a Novel Chemical Solution Route for Thermoelectric Applications

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