Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger--Poisson Pair Calculations

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概要

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• A self-consistent calculation establishes a bulk built-in potential by applying a DC bias to a gate/insulators/semiconductor (GIS) structure of a metal--oxide--semiconductor field-effect transistor (MOSFET). The width of a semi-analytical depletion layer near the interface of the GIS structure of an n-type MOSFET (nMOSFET) can be extracted by self-consistent calculation. The grand canonical ensemble improves the quantitative calculation for the theoretical evaluation of the self-consistent calculation. It is possible that a new approximation establishing the self-consistent potential appropriately merges with a classical transport model at low temperatures because of minimizing quantum calculations in a momentum space.

• 2011-10-25

著者

• Chung Che-Sheng

  Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China

関連論文

• Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger--Poisson Pair Calculations

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