High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

概要

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We present the results of a perpendicular magnetic tunnel junction (MTJ) that displays simultaneously low critical switching current and voltage, as well as high thermal stability factor. These results were achieved using a free layer of the MgO/CoFeB/MgO structure by increasing the spin torque efficiency to an average of 3.0 k_{\text{B}}T/μA for 37-nm-diameter junctions, about three times that of a MgO/CoFeB/Ta free layer, which makes it the highest value reported to date. By comparing two films with different \mathit{RA}, hence different switching voltage and power, we explore the contributions of heating and voltage-modulated anisotropy change to the switching properties.
2012-09-25