Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

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概要

• 論文の詳細を見る

• Gallium nitride layers were grown by a new migration enhanced epitaxy technique called MEAglow. Initial experiments were performed to characterize the plasma source used and to examine the surfaces of thin samples grown by the technique. Atomic force microscopy (AFM) results show root mean square (RMS) surface roughness values of less than 1 nm for samples grown at 650 °C, this is commensurate with Ga-face material grown directly on nitrided sapphire substrates.

• 2012-01-25

著者

• Butcher K.

  Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, Ontario, P7B 1E5, Canada

• Kemp Brad

  Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, Ontario, P7B 1E5, Canada

• Terziyska Penka

  Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, Ontario, P7B 1E5, Canada

• Hristov Ilian

  Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, Ontario, P7B 1E5, Canada

• Binsted Peter

  Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, Ontario, P7B 1E5, Canada

• Alexandrov Dimiter

  Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, Ontario, P7B 1E5, Canada

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• Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

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