Dependence of the Properties of Cu(In,Ga)S2/Mo Films Prepared by Two-Stage Evaporation Method on Degree of Vacuum during Deposition
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概要
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The influence of background pressure in multisource evaporation is not straightforward to explain, but it is clear that the amount of absorbed gases on the surface of the growing grains change with pressure. This may influence surface energies, and consequently the growth mechanism. We investigated the relation between the orientation of Cu(In,Ga)S2 films and pressure during deposition. We varied the background pressure during the deposition of the precursor film (first stage) by varying the temperature of the sulphur source, by throttling the vacuum pump, or by introducing N2 gas. We found that Cu(In,Ga)S2 films prepared from In--Ga--S precursors show (112) orientation if the pressure during precursor deposition is less than 0.03 Pa when the pressure is mainly attributable to sulphur. When it is mainly due to N2 gas, the pressure at which the orientation changes is 0.14 Pa. The orientation of the final film reflects the orientation of the (In,Ga)2S3 precursor immediately before entering the second stage.
- 2012-10-25
著者
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Souza Diogo
Departamento De Bioquimica Instituto De Ciencias Basicas Da Saude Universidade Federal Do Rio Grande
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Klenk Reiner
Helmholtz-Zentrum für Materialien und Energie, Institute for Heterogeneous Material Systems, Hahn-Meitner-Platz 1, D14109 Berlin, Germany
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Kaigawa Ryuji
Department of Electronics and Informatics, Ryukoku University, Otsu 520-2194, Japan
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Satake Yasuhiro
Department of Electronics and Informatics, Ryukoku University, Otsu 520-2194, Japan
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Satake Yasuhiro
Department of Chemistry, Faculty of Science, Kanazawa University
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