Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

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概要

• 論文の詳細を見る

• Reduction of specific contact resistivity is one of the key items for downscaling of device feature size. This paper discusses an accurate method of measuring specific contact resistivity by using our simple four-point probe test structure having a small area, the interface resistance of which is to be measured, fabricated on a substrate that has low sheet resistance. We also show its application for direct specific contact resistivity measurements of several systems that have dopant dependence, i.e., the NiPtSi/Si, NiPtSi/SiGe, and Pt silicide systems, as well as the metal-metal system between silicide and contact plug metal.

• 2012-10-25

著者

• Ohuchi Kazuya

  Toshiba America Electronic Components, Inc., 2070, Route 52, Hopewell Junction, NY 12533, U.S.A.

• Ohuchi Kazuya

  Toshiba Corporation, Yokohama 235-8522, Japan

• Kondo Masaki

  Toshiba Corporation, Yokohama 235-8522, Japan

• Lavoie Christian

  International Business Machines Corporation, IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.

• Yang Bin

  GlobalFoundries, T. J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.

• Matsuzawa Kazuya

  Toshiba Corporation, Yokohama 235-8522, Japan

• Solomon Paul

  International Business Machines Corporation, IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.

関連論文

• Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal--Oxide--Semiconductor Technology and Beyond
• Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

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