Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer
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概要
- 論文の詳細を見る
A phase-change random access memory (PCRAM) geometric model is proposed to improve the thermal efficiency. A low-\kappa layer with very low thermal conductivity is inserted into the insulation layer. Then, the effective programming area and the programming current are greatly reduced. In addition, the selection conditions for the low-\kappa layer are carefully studied to help us find a suitable material that can be used as a low-\kappa layer. It is believed that this simple geometric model is a useful tool for increasing the thermal efficiency of PCRAM devices and for selecting the appropriate conditions for a low-\kappa layer allowing low-current operation.
- 2012-02-25
著者
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Ji An
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
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Wang Xiaodong
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wang Xiaodong
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Yang Fuhua
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Yang Fuhua
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Zhang Jiayong
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Wang Xiaofeng
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Ma Huili
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Fu Yingchun
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Song Zhitang
The State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Feng Songlin
The State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Ma Huili
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Fu Yingchun
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Feng Songlin
The State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Song Zhitang
The State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Wang Xiaofeng
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Zhang Jiayong
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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