Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium--Gallium--Zinc Oxide

概要

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We measured a significantly low off-state current (135 yA/μm at 85 °C) of a metal oxide semiconductor (MOS) transistor using indium--gallium--zinc oxide (IGZO), which is an oxide semiconductor material. Note that ``y'' is 10^{-24}. A transistor in which the hydrogen concentration in an IGZO film is lowered (5\times 10^{19} cm-3 or lower) was used. To estimate the minute current accurately, we established a measurement method in which changes in the amount of electrical charge are measured for a long time. Such extremely low off-state current characteristics show promise for new applications of IGZO transistors in memories.
2012-02-25