6,13-Bis(triisopropylsilylethynyl) Pentacene Organic Field-Effect Transistors Utilizing Poly(p-silsesquioxane) Insulating Layers with Various Ratios of Phenol Groups

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概要

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• The effects of the hydroxyl group of polymer gate insulators on the characteristics of p-type 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene)-based organic field-effect transistors (OFETs) using poly(p-silsesquioxane) (PSQ) derivatives, which contained various ratios of a phenol group with a hydroxyl group bonded to a phenyl ring in the side chain of their molecular structures, were investigated. The hole mobilities of all top-contact bottom-gate-type OFETs with various PSQ insulators were estimated to be on the order of 0.1 cm2 V-1 s-1. The current on/off ratio of an OFET increased with decreasing ratio of the hydroxyl group. The bottom-contact devices with photocrosslinked PSQ insulators containing a low ratio of the phenol group exhibited p-channel FET characteristics with a high field-effect mobility of 0.1 cm2 V-1 s-1 and negligible hysteresis in both output and transfer characteristics. An OFET driven at an operating voltage of 10 V was achieved by using the thin 120-nm-thick photocrosslinked PSQ insulator.

• 2012-04-25

著者

• Ohmori Yutaka

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kajii Hirotake

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Nakanishi Yuta

  Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Tamura Koki

  Tokyo Ohka Kogyo Co., Ltd., Samukawa, Kanagawa 253-0114, Japan

関連論文

• 6,13-Bis(triisopropylsilylethynyl) Pentacene Organic Field-Effect Transistors Utilizing Poly(p-silsesquioxane) Insulating Layers with Various Ratios of Phenol Groups
• Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment
• Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment (Special Issue : Solid State Devices and Materials)

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