Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation
スポンサーリンク
概要
- 論文の詳細を見る
We report on a mid wavelength (MW) type II InAs/GaSb superlattice (SL) photodetector structure using SiOxNy as the passivation material. The 50% cutoff wavelength of the photoresponse is 4.8 μm at 77 K. R_{0}A, the resistance-and-area product at zero bias, is 2.1\times 10^{3} \Omega\cdotcm2 for the device with the SiOxNy passivation, which is about 13 times larger than that without the passivation. Our result indicates SiOxNy passivation is an effective way to reduce the shunt current for MW InAs/GaSb SL photodetector.
- 2012-07-25
著者
-
Deng Gongrong
Department of Basic Research and Development, Kunming Institute of Physics, Kunming 650023, China
-
Wei Yang
Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
-
Huang Jianliang
Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
-
Ma Wenquan
Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
-
Cao Yulian
Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
-
Zhang Yanhua
Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
-
Cui Kai
Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
-
Shi Yanli
Department of Basic Research and Development, Kunming Institute of Physics, Kunming 650023, China