Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

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概要

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• We successfully fabricated ferroelectric gate thin film transistors (FGTs) using solution-processed (Bi,La)4Ti3O12 (BLT)/Pb(Zr,Ti)O3 (PZT) stacked films and an indium--tin oxide (ITO) film as ferroelectric gate insulators and an oxide channel, respectively. The typical n-type channel transistors were obtained with the counterclockwise hysteresis loop due to the ferroelectric property of the BLT/PZT stacked gate insulators. These FGTs exhibited good device performance characteristics, such as a high ON/OFF ratio of 10^{6}, a large memory window of 1.7--3.1 V, and a large ON current of 0.5--2.5 mA. In order to investigate interface charge trapping for these devices, we applied the conductance method to MFS capacitors, i.e., Pt/ITO/BLT/PZT/Pt capacitors. As a result, the interface charge trap density (D_{\text{it}}) between the ITO and BLT/PZT stacked films was estimated to be in the range of 10^{-11}--10^{-12} eV-1 cm-2. The small D_{\text{it}} value suggested that good interfaces were achieved.

• 2012-09-25

著者

• Shimoda Tatsuya

  School Of Materials Science Japan Advanced Institute Of Science And Technology

• Miyasako Takaaki

  ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa 923-1211, Japan

• Trinh Bui

  ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa 923-1211, Japan

• Tue Phan

  ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa 923-1211, Japan

• Tokumitsu Eisuke

  ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa 923-1211, Japan

• Thanh Pham

  School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan

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• Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

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