Stable Fourth-Harmonic Generation of a Q-Switched Nanosecond--Kilohertz Nd:YVO4 Laser and Its Application to Dicing of Silicon Wafer
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概要
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A simple scheme for the stable fourth-harmonic generation of a Q-switched nanosecond--kilohertz Nd:YVO4 laser through a type-I \beta-barium borate crystal is presented. By heating the crystal at an optimized temperature, a conversion efficiency of up to 30.2% from 532 to 266 nm is achieved at a repetition rate of 20 kHz, and the fluctuation in average power at 266 nm is less than 0.9% at approximately 1.1 W. The application of the 266 nm laser to the laser dicing of a silicon wafer is also reported.
- 2012-08-25
著者
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Harimoto Tetsuo
Faculty Of Engineering University Of Yamanashi
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YO Boku
Faculty of Engineering, University of Yamanashi
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UCHIDA Kosuke
Faculty of Engineering, University of Yamanashi
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Yo Boku
Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Uchida Kosuke
Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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