Perfect Domain-Lattice Matching between MgB2 and Al2O3: Single-Crystal MgB2 Thin Films Grown on Sapphire

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概要

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• We have found that single-crystal films can be grown on (0001) Al2O3 substrates through the golden relation of a perfect lattice-matching ratio (8:3\sqrt{3}) between the a-axis lattice constants of MgB2 and Al2O3. Selected-area electron diffraction patterns evidently indicate hexagonal MgB2 film with a 30° in-plane rotation with respect to the Al2O3 substrate. The critical current density at zero field is comparable to the depairing critical current density and rapidly decreases with increasing applied field owing to the lack of pinning sites, as observed for high-quality MgB2 single crystals.

• 2012-08-25

著者

• Oh Sangjun

  National Research Laboratory For The Materials Sciences And Technology

• Seong Won

  Future Convergence Technology Division, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea

• Kang Won

  BK21 Physics Division and Department of Physics, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea

• Oh Sangjun

  National Fusion Research Institute (NFRI), Daejeon 305-806, Republic of Korea

• Kang Won

  BK21 Physics Division and Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea

関連論文

• A Novel 3-D Network of Fe(II) Glutarate : 2-D Honeycomb-type Edge-shared FeO_6 Layers and Isolated Interlayer FeO_6 Octahedra
• Perfect Domain-Lattice Matching between MgB2 and Al2O3: Single-Crystal MgB2 Thin Films Grown on Sapphire
• Flux Pinning Mechanism in Single-Crystalline MgB
• Flux Pinning Mechanism in Single-Crystalline MgB₂ Thin Films

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