Tunneling Resistances Associated with Classical-to-Quantum Fluctuations in Single Point-Contact Junction

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概要

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• The studied single point-contact junction, which bridges superconducting (Pb) and ferromagnetic (Co) granular thin films, presents magnetic-field-insensitive nonlinear resistances versus biases at low temperature. This work shows that the disordered granules can cause random charge localizations \delta q as well as the resulting offset-bias \delta V=\delta q/C_{\text{j}} across the junction capacitance C_{\text{j}}, and thereby invalidate the (magnetic-field-dependent) energy-level structures of materials Pb and Co. Simultaneously, the disorder brings in the fundamental influences of the non-equilibrium fluctuations. A simple model by golden approximation is then addressed to demonstrate the basic fluctuation behaviors. The results indicates that quantum and thermal fluctuations mainly drive the behaviors of the differential resistances of this disordered system as the experimental observations.

• 2011-06-25

著者

• Ho I

  Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan 115, R.O.C.

• Chen Chii

  Institute of Physics, Academia Sinica, Taipei, Taiwan 115, R.O.C.

• Joung Chung

  Department of Physics, Nation Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.

• Chung Tao

  Department of Electronics Engineering, National Taiwan University, Taipei, Taiwan 106, R.O.C.

関連論文

• Tunneling Resistances Associated with Classical-to-Quantum Fluctuations in Single Point-Contact Junction

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