Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS2 Doped with Different Impurities

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概要

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• The low-frequency dielectric function and conductivity at ferroelectric phase transition have been analyzed in monoclinic TlInS2 crystals doped with different impurities. Complementary, room-temperature optical absorption and photoconductivity have been examined to identify shallow and deep energy levels caused by the introduced impurities. It is found that only shallow impurities broaden and shift dielectric anomaly towards lower temperatures. Contrary to our expectation, the dark conductivity at the temperature of the dielectric anomaly is maximum rather than minimum. The dielectric breakdown of the shallow impurities is proposed to be responsible for the observed behavior of the dark conductivity in monoclinic TlInS2.

• 2011-05-25

著者

• Alekperov Oktay

  Institute of Physics, Azerbaijan National Academy of Science, 33 H. Javid, Baku AZ-1143, Azerbaijan

• Alekperov Oktay

  Institute of Physics, Azerbaijan National Academy of Sciences, H. Javid Av. 33, Baku 1143, Azerbaijan

関連論文

• $\gamma$-Radiation Stimulated Structural Transition of Monoclinic TlInS2 to Hexagonal Phase
• Spin--Orbit Interactions in a Quasi-Two-Dimensional Electron Gas with Finite Thickness
• Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS2 Doped with Different Impurities

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