Mechanism Verification of Electrochemical Migration of Fine Cu Wiring

概要

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The mechanisms of electrochemical migration and consequent insulation failure in fine-pitch Cu wiring (line/space = 3 μm/3 μm) are investigated. A model in which the migration takes place in the presence of water in a phenol-based resin--resin interface between biased Cu traces is proposed. Replacing the bottom resin layer by a SiN layer is found to be an effective method of considerably enhancing the leakage characteristics.
The Japan Society of Applied Physicsの論文
2011-05-25