Influence of the Current on Electron Tunnelling into a Thin Superconducting Film

スポンサーリンク

概要

• 論文の詳細を見る

• An anomaly has been found in the current-voltage characteristics of the electron tunnelling in a cross type Sn–SnOx–Pb junction with a small tunnelling resistance and a very thin tin film, which was proved to correspond to the superconducting-to-normal transition in the tin film. Some properties of the anomaly were also examined. It is pointed out that as the electron tunnelling method requires relatively large current through the junction with a small tunnel resistance in order to measure the energy gap directly, the superconducting state of a very thin film is disturbed by this tunnel current.

• Physical Society of Japanの論文
• 1968-03-05

著者

• Shigi Toyoichiro

  Faculty Of Science Osaka City University

• Nakaya Shigehisa

  Research Laboratory Oki Electric Co. Ltd.

• Nakaya Shigehisa

  Research Laboratory, OKI Electric Co., Ltd., Tokyo

• Ushiho Kousuke

  Research Laboratory, OKI Electric Co., Ltd., Tokyo

関連論文

• NMR Experiments on Dilute ^3He-^4He Mixtures below 1 mK : I. QUANTUM LIQUIDS AND SOLIDS : Liquid ^4He and ^3He-^4He
• Nuclear Susceptibility and Zeeman-Exchange Relaxation Time of Solid ^3He along the Melting Curve below 15 mK
• Temperature and Magnetic Field Dependences of the Josephson Current in the Junction with a Very Thin Film of Tin
• Anomalous Behaviors in Josephson Current
• Influence of the Current on Electron Tunnelling into a Thin Superconducting Film
• Dependence of the Energy Gap in Tin Films on Magnetic Field and Film Thickness by Electron Tunnelling

スポンサーリンク