Out-of-Plane Dielectric Behavior of Insulating Bi2Sr2RECu2O8+δ (RE = Dy, Y, and Er)
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概要
- 論文の詳細を見る
This report describes the low-frequency dielectric response of lightly doped Bi2Sr2RECu2O8+δ (RE: rare earth) with various oxygen contents. The out-of-plane dielectric constant $\epsilon_{c}^{\prime}$ exhibits an anomalous temperature dependence that is independent of RE elements, suggesting that the insulating Bi2Sr2CaCu2O8+δ (Bi2212) systems have a two-dimensional dielectric character at low temperatures. In disordered solids such as RE-substituted Bi2212 compounds, the charge carrier displays a localized character and the forced movement causes a dc current flow. Furthermore, the oxygen dopants act as trapped sites and strongly affect the out-of-plane dielectric properties.
- Physical Society of Japanの論文
- 2010-05-15
著者
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Maki Makoto
Department Of Health Science Hokkaido University
-
Nakao Shun-ichi
Department Of Physics Saga University
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Shu-nan Masafumi
Department of Physics, Saga University, Saga 840-8502, Japan
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Yufu Shigeyuki
Department of Physics, Saga University, Saga 840-8502, Japan
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- Out-of-Plane Dielectric Behavior of Insulating Bi2Sr2RECu2O8+δ (RE = Dy, Y, and Er)