Theory of Electron Transport near Anderson–Mott Transitions

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概要

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• We present a theory of the DC electron transport in insulators near Anderson–Mott transitions under the influence of coexisting electron correlation and randomness. At sufficiently low temperatures, the DC electron transport in Anderson–Mott insulators is determined by the single-particle density of states (DOS) near the Fermi energy ($E_{\text{F}}$). Anderson insulators, caused by randomness, are characterized by a nonzero DOS at $E_{\text{F}}$. However, recently, the authors proposed that coexisting randomness and short-ranged interaction in insulators open a soft Hubbard gap in the DOS, and the DOS vanishes only at $E_{\text{F}}$. Based on the picture of the soft Hubbard gap, we derive a formula for the critical behavior for the temperature dependence of the DC resistivity. Comparisons of the present theory with experimental results of electrostatic carrier doping into an organic conductor $\kappa$-(BEDT-TTF)2Cu[N(CN)2]Br demonstrate the evidence for the present soft-Hubbard scaling.

• 2010-11-15

著者

• Imada Masatoshi

  CREST, JST, Bunkyo, Tokyo 113-8656, Japan

• Shinaoka Hiroshi

  Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan

• Imada Masatoshi

  CREST, JST, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

関連論文

• Theory of Electron Transport near Anderson–Mott Transitions
• Electronic and Magnetic Properties of Metallic Phases under Coexisting Short-Range Interaction and Diagonal Disorder
• Mott Transition and Phase Diagram of \kappa-(BEDT-TTF)2Cu(NCS)2 Studied by Two-Dimensional Model Derived from Ab initio Method

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