Fundamental Influence of C on Cohesion of Pd/TiAl Interfaces
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概要
- 論文の詳細を見る
First-principles calculations reveal that for Pd/TiAl interfaces the doping of C atoms at the surface centers of Pd interface layers could both increase the bond strength by a factor of 2 and decrease the interface energy by a factor of 3, suggesting that C would be a good doping candidate of increasing the lifetime of Pd/TiAl membranes. Calculations also show that although the addition of C atoms decreases the interface bond strength of Pd–Al and Pd–Ti bonds, the extra interface Ti–C and Al–C bonds are strong enough to induce the strengthening effect of the C doping.
- Physical Society of Japanの論文
- 2009-11-15
著者
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He Yue
State Key Laboratory Of Powder Metallurgy Central South University
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Gong Hao
State Key Lab Of Powder Metallurgy Central South University:physics Department University Of Texas A
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He Yue
State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, China
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Liang Chao
State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, China
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- Fundamental Influence of C on Cohesion of Pd/TiAl Interfaces